R8003KND3TL1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: HIGH-SPEED SWITCHING NCH 800V 3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
auf Bestellung 885 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.54 EUR |
| 10+ | 3.16 EUR |
| 100+ | 2.22 EUR |
| 500+ | 1.8 EUR |
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Technische Details R8003KND3TL1 Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 3A, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V, Power Dissipation (Max): 45W (Ta), Vgs(th) (Max) @ Id: 4.5V @ 2mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V.
Weitere Produktangebote R8003KND3TL1 nach Preis ab 1.14 EUR bis 4.59 EUR
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R8003KND3TL1 | Hersteller : ROHM Semiconductor |
MOSFETs TO252 800V 3A N-CH MOSFET |
auf Bestellung 7664 Stücke: Lieferzeit 10-14 Tag (e) |
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| R8003KND3TL1 | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 800V 3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) |
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| R8003KND3TL1 | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 800V 3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2430 Stücke: Lieferzeit 14-21 Tag (e) |
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| R8003KND3TL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 9A; 48W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 9A Power dissipation: 48W Case: TO252 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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R8003KND3TL1 | Hersteller : Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING NCH 800V 3A Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V Power Dissipation (Max): 45W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 2mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V |
Produkt ist nicht verfügbar |
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| R8003KND3TL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 9A; 48W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 9A Power dissipation: 48W Case: TO252 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |