auf Bestellung 7661 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.24 EUR |
| 10+ | 2.96 EUR |
| 100+ | 2.08 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.62 EUR |
| 2500+ | 1.59 EUR |
| 10000+ | 1.57 EUR |
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Technische Details R8003KND3TL1 ROHM Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 3A, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V, Power Dissipation (Max): 45W (Ta), Vgs(th) (Max) @ Id: 4.5V @ 2mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V.
Weitere Produktangebote R8003KND3TL1 nach Preis ab 1.14 EUR bis 4.63 EUR
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R8003KND3TL1 | Hersteller : Rohm Semiconductor |
 Description: HIGH-SPEED SWITCHING NCH 800V 3APackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V Power Dissipation (Max): 45W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 2mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V |
auf Bestellung 688 Stücke: Lieferzeit 10-14 Tag (e) |
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| R8003KND3TL1 | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 800V 3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) |
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| R8003KND3TL1 | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 800V 3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2430 Stücke: Lieferzeit 14-21 Tag (e) |
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R8003KND3TL1 | Hersteller : Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING NCH 800V 3A Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V Power Dissipation (Max): 45W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 2mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V |
Produkt ist nicht verfügbar |