R8005ANJGTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: NCH 800V 5A POWER MOSFET : R8005
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 2.91 EUR |
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Technische Details R8005ANJGTL Rohm Semiconductor
Description: NCH 800V 5A POWER MOSFET : R8005, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-263S, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V.
Weitere Produktangebote R8005ANJGTL nach Preis ab 2.99 EUR bis 6.48 EUR
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R8005ANJGTL | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 800V 5A 3-Pin(2+Tab) LPTS T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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R8005ANJGTL | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 800V 5A 3-Pin(2+Tab) LPTS T/R |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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R8005ANJGTL | Hersteller : Rohm Semiconductor |
Description: NCH 800V 5A POWER MOSFET : R8005 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263S Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
auf Bestellung 1984 Stücke: Lieferzeit 10-14 Tag (e) |
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R8005ANJGTL | Hersteller : ROHM Semiconductor |
MOSFET MOSFET |
auf Bestellung 1992 Stücke: Lieferzeit 10-14 Tag (e) |
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