R8008ANJGTL Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 42+ | 4.31 EUR |
| 50+ | 4.09 EUR |
| 100+ | 3.87 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
42 Stücke
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Technische Details R8008ANJGTL Rohm Semiconductor
Description: NCH 800V 8A POWER MOSFET : R8008, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-263S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote R8008ANJGTL nach Preis ab 4.36 EUR bis 12.71 EUR
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R8008ANJGTL | Rohm Semiconductor |
 Trans MOSFET N-CH 800V 8A 3-Pin(2+Tab) LPTS T/R |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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R8008ANJGTL | ROHM Semiconductor |
MOSFETs TO263 800V 8A N-CH MOSFET |
auf Bestellung 826 Stücke: Lieferzeit 10-14 Tag (e) |
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R8008ANJGTL | Rohm Semiconductor |
Description: NCH 800V 8A POWER MOSFET : R8008 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
auf Bestellung 851 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R8008ANJGTL |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 800V 8A 3-Pin(2+Tab) LPTS T/R
Trans MOSFET N-CH 800V 8A 3-Pin(2+Tab) LPTS T/R
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 7.98 EUR |
| 50+ | 6.19 EUR |
| 100+ | 4.89 EUR |
| R8008ANJGTL |
|
Hersteller: ROHM Semiconductor
MOSFETs TO263 800V 8A N-CH MOSFET
MOSFETs TO263 800V 8A N-CH MOSFET
auf Bestellung 826 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.64 EUR |
| 10+ | 5.59 EUR |
| 100+ | 5.09 EUR |
| 500+ | 4.63 EUR |
| 1000+ | 4.36 EUR |
| R8008ANJGTL |
|
Hersteller: Rohm Semiconductor
Description: NCH 800V 8A POWER MOSFET : R8008
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: NCH 800V 8A POWER MOSFET : R8008
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 851 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.71 EUR |
| 10+ | 8.54 EUR |
| 100+ | 6.19 EUR |
| 500+ | 5.19 EUR |