R8008ANJGTL Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 42+ | 4.21 EUR |
| 50+ | 4 EUR |
| 100+ | 3.77 EUR |
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Technische Details R8008ANJGTL Rohm Semiconductor
Description: NCH 800V 8A POWER MOSFET : R8008, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263S, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 195W (Tc), Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote R8008ANJGTL nach Preis ab 4.32 EUR bis 12.71 EUR
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R8008ANJGTL | Rohm Semiconductor |
 Trans MOSFET N-CH 800V 8A 3-Pin(2+Tab) LPTS T/R |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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R8008ANJGTL | ROHM Semiconductor |
MOSFETs TO263 800V 8A N-CH MOSFET |
auf Bestellung 826 Stücke: Lieferzeit 10-14 Tag (e) |
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R8008ANJGTL | Rohm Semiconductor |
Description: NCH 800V 8A POWER MOSFET : R8008 Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263S Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 851 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R8008ANJGTL |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 800V 8A 3-Pin(2+Tab) LPTS T/R
Trans MOSFET N-CH 800V 8A 3-Pin(2+Tab) LPTS T/R
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 7.81 EUR |
| 50+ | 6.06 EUR |
| 100+ | 4.78 EUR |
| R8008ANJGTL |
|
Hersteller: ROHM Semiconductor
MOSFETs TO263 800V 8A N-CH MOSFET
MOSFETs TO263 800V 8A N-CH MOSFET
auf Bestellung 826 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.64 EUR |
| 10+ | 7.12 EUR |
| 100+ | 5.09 EUR |
| 500+ | 4.63 EUR |
| 1000+ | 4.32 EUR |
| R8008ANJGTL |
|
Hersteller: Rohm Semiconductor
Description: NCH 800V 8A POWER MOSFET : R8008
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263S
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: NCH 800V 8A POWER MOSFET : R8008
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263S
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 851 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.71 EUR |
| 10+ | 8.54 EUR |
| 100+ | 6.19 EUR |
| 500+ | 5.19 EUR |