R8008ANJGTL Rohm Semiconductor
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 42+ | 3.5 EUR |
| 50+ | 3.25 EUR |
| 100+ | 3.02 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details R8008ANJGTL Rohm Semiconductor
Description: NCH 800V 8A POWER MOSFET : R8008, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-263S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote R8008ANJGTL nach Preis ab 3.82 EUR bis 10.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
R8008ANJGTL | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 800V 8A 3-Pin(2+Tab) LPTS T/R |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
R8008ANJGTL | Hersteller : ROHM Semiconductor |
MOSFETs TO263 800V 8A N-CH MOSFET |
auf Bestellung 2464 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
R8008ANJGTL | Hersteller : Rohm Semiconductor |
Description: NCH 800V 8A POWER MOSFET : R8008 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
auf Bestellung 851 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| R8008ANJGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 195W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 32A Power dissipation: 195W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.54Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
|
|
R8008ANJGTL | Hersteller : Rohm Semiconductor |
Description: NCH 800V 8A POWER MOSFET : R8008 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||
| R8008ANJGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 195W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 32A Power dissipation: 195W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.54Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |