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R8011KNZ4C13

R8011KNZ4C13 Rohm Semiconductor

r8011knz4c13-e.pdf Hersteller: Rohm Semiconductor
Description: NCH 800V 11A, TO-247AD, HIGH-SPE
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
600+5.23 EUR
Mindestbestellmenge: 600
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details R8011KNZ4C13 Rohm Semiconductor

Description: NCH 800V 11A, TO-247AD, HIGH-SPE, Packaging: Tape & Reel (TR), Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 5.5mA, Supplier Device Package: TO-247G, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V.

Weitere Produktangebote R8011KNZ4C13 nach Preis ab 6.4 EUR bis 12.16 EUR

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R8011KNZ4C13 R8011KNZ4C13 Hersteller : Rohm Semiconductor r8011knz4c13-e.pdf Description: NCH 800V 11A, TO-247AD, HIGH-SPE
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.16 EUR
10+8.28 EUR
100+6.4 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
R8011KNZ4C13 R8011KNZ4C13 Hersteller : ROHM Semiconductor r8011knz4c13-e.pdf MOSFETs TO247 800V N CH 3.5A
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