RAL1D Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 200V 1A DO213AA
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 175°C
Supplier Device Package: DO-213AA, MINI-MELF
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details RAL1D Diotec Semiconductor
Description: DIODE GEN PURP 200V 1A DO213AA, Current - Reverse Leakage @ Vr: 3 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -50°C ~ 175°C, Supplier Device Package: DO-213AA, MINI-MELF, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 150 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-213AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote RAL1D
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
RAL1D | Hersteller : Diotec Semiconductor |
Description: DIODE GEN PURP 200V 1A DO213AA Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AA, MINI-MELF Operating Temperature - Junction: -50°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
Produkt ist nicht verfügbar |