RBA40N10EANS-5UA11#HB0 Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 40A SO8-FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 28µA
Supplier Device Package: μSO8-FL
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
Qualification: AEC-Q101
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Technische Details RBA40N10EANS-5UA11#HB0 Renesas Electronics Corporation
Description: MOSFET N-CH 100V 40A SO8-FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 4V @ 28µA, Supplier Device Package: μSO8-FL, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote RBA40N10EANS-5UA11#HB0 nach Preis ab 0.84 EUR bis 3.59 EUR
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RBA40N10EANS-5UA11#HB0 | Renesas Electronics Corporation |
Description: MOSFET N-CH 100V 40A SO8-FL Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 28µA Supplier Device Package: μSO8-FL Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RBA40N10EANS-5UA11#HB0 | Renesas Electronics |
MOSFETs Auto. MOS REXFET-1 100V 11.1mohm 3x3pkg |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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RBA40N10EANS-5UA11#HB0 | RENESAS |
Description: RENESAS - RBA40N10EANS-5UA11#HB0 - Leistungs-MOSFET, n-Kanal, 100 V, 40 A, 0.0111 ohm, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 57W Anzahl der Pins: 8Pin(s) Produktpalette: REXFET-1 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0111ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| RBA40N10EANS-5UA11#HB0 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 40A SO8-FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 28µA
Supplier Device Package: μSO8-FL
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 40A SO8-FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 28µA
Supplier Device Package: μSO8-FL
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.27 EUR |
| 11+ | 2.07 EUR |
| 50+ | 1.55 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.09 EUR |
| RBA40N10EANS-5UA11#HB0 |
|
Hersteller: Renesas Electronics
MOSFETs Auto. MOS REXFET-1 100V 11.1mohm 3x3pkg
MOSFETs Auto. MOS REXFET-1 100V 11.1mohm 3x3pkg
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.42 EUR |
| 10+ | 2.14 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1 EUR |
| 3000+ | 0.86 EUR |
| 6000+ | 0.84 EUR |
| RBA40N10EANS-5UA11#HB0 |
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Hersteller: RENESAS
Description: RENESAS - RBA40N10EANS-5UA11#HB0 - Leistungs-MOSFET, n-Kanal, 100 V, 40 A, 0.0111 ohm, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 57W
Anzahl der Pins: 8Pin(s)
Produktpalette: REXFET-1 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0111ohm
SVHC: No SVHC (25-Jun-2025)
Description: RENESAS - RBA40N10EANS-5UA11#HB0 - Leistungs-MOSFET, n-Kanal, 100 V, 40 A, 0.0111 ohm, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 57W
Anzahl der Pins: 8Pin(s)
Produktpalette: REXFET-1 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0111ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 70+ | 3.59 EUR |
| 110+ | 2.13 EUR |
| 164+ | 1.31 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.94 EUR |