RBA40N10EANS-5UA11#HB0 Renesas Electronics
| Anzahl | Preis |
|---|---|
| 2+ | 2.52 EUR |
| 10+ | 1.59 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.77 EUR |
| 3000+ | 0.71 EUR |
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Technische Details RBA40N10EANS-5UA11#HB0 Renesas Electronics
Description: MOSFET N-CH 100V 40A SO8-FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 4V @ 28µA, Supplier Device Package: μSO8-FL, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote RBA40N10EANS-5UA11#HB0
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RBA40N10EANS-5UA11#HB0 | Hersteller : RENESAS |
 Description: RENESAS - RBA40N10EANS-5UA11#HB0 - Leistungs-MOSFET, n-Kanal, 100 V, 40 A, 0.0111 ohm, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 57W Anzahl der Pins: 8Pin(s) Produktpalette: REXFET-1 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0111ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| RBA40N10EANS-5UA11#HB0 | Hersteller : Renesas Electronics Corporation |
Description: MOSFET N-CH 100V 40A SO8-FL Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 28µA Supplier Device Package: μSO8-FL Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| RBA40N10EANS-5UA11#HB0 | Hersteller : Renesas Electronics Corporation |
Description: MOSFET N-CH 100V 40A SO8-FL Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 28µA Supplier Device Package: μSO8-FL Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |