RBK04U04GNS-0000#HBH Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: POWER TRS2 LIB 8P HVSON ANL4 OTH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 83W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSON (5x6)
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Technische Details RBK04U04GNS-0000#HBH Renesas Electronics Corporation
Description: POWER TRS2 LIB 8P HVSON ANL4 OTH, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 83W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 10V, Rds On (Max) @ Id, Vgs: 1.5mOhm @ 18A, 10V, Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-HSON (5x6).
Weitere Produktangebote RBK04U04GNS-0000#HBH
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| RBK04U04GNS-0000#HBH | Hersteller : Renesas Electronics |
MOSFETs Nch Power MOSFET 40V 35A 1.5mohm SON-8 5x6 |
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