Produkte > ROHM SEMICONDUCTOR > RBR10BGE30ATL
RBR10BGE30ATL

RBR10BGE30ATL Rohm Semiconductor


datasheet?p=RBR10BGE30A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: 30V, 10A, TO-252, CATHODE COMMON
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.07 EUR
Mindestbestellmenge: 2500
Produktrezensionen
Produktbewertung abgeben

Technische Details RBR10BGE30ATL Rohm Semiconductor

Description: 30V, 10A, TO-252, CATHODE COMMON, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-252GE, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A, Current - Reverse Leakage @ Vr: 100 µA @ 30 V.

Weitere Produktangebote RBR10BGE30ATL nach Preis ab 1.03 EUR bis 2.59 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RBR10BGE30ATL RBR10BGE30ATL Hersteller : Rohm Semiconductor datasheet?p=RBR10BGE30A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 30V, 10A, TO-252, CATHODE COMMON
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.43 EUR
10+ 2.16 EUR
100+ 1.68 EUR
500+ 1.39 EUR
1000+ 1.1 EUR
Mindestbestellmenge: 8
RBR10BGE30ATL RBR10BGE30ATL Hersteller : ROHM Semiconductor datasheet?p=RBR10BGE30A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Schottky Diodes & Rectifiers 30V, 10A, TO-252, Cathode Common, Low VF Schottky Barrier Diode
auf Bestellung 2291 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.59 EUR
10+ 2.34 EUR
100+ 1.81 EUR
500+ 1.49 EUR
1000+ 1.18 EUR
2500+ 1.1 EUR
5000+ 1.03 EUR
Mindestbestellmenge: 2