Produkte > ROHM SEMICONDUCTOR > RBR10T60ANZC9
RBR10T60ANZC9

RBR10T60ANZC9 Rohm Semiconductor

datasheet?p=RBR10T60ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 60V 5A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.04 EUR
50+ 1.64 EUR
100+ 1.3 EUR
500+ 1.1 EUR
Mindestbestellmenge: 9
Produktrezensionen
Produktbewertung abgeben

Technische Details RBR10T60ANZC9 Rohm Semiconductor

Description: DIODE ARR SCHOTT 60V 5A TO220FN, Packaging: Cut Tape (CT), Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 5A, Supplier Device Package: TO-220FN, Operating Temperature - Junction: 150°C, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A, Current - Reverse Leakage @ Vr: 200 µA @ 60 V.

Weitere Produktangebote RBR10T60ANZC9

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RBR10T60ANZC9 RBR10T60ANZC9 Hersteller : Rohm Semiconductor datasheet?p=RBR10T60ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 60V 5A TO220FN
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
RBR10T60ANZC9 RBR10T60ANZC9 Hersteller : ROHM Semiconductor datasheet?p=RBR10T60ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Schottky Diodes & Rectifiers RBR10T60ANZ is Schottky Barrier Diode for general rectification.
Produkt ist nicht verfügbar