RCD080N25TL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 8A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.42 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details RCD080N25TL Rohm Semiconductor
Description: MOSFET N-CH 250V 8A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V, Power Dissipation (Max): 850mW (Ta), 20W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: CPT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V.
Weitere Produktangebote RCD080N25TL nach Preis ab 1.15 EUR bis 3.2 EUR
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RCD080N25TL | Rohm Semiconductor |
Trans MOSFET N-CH Si 250V 8A 3-Pin(2+Tab) CPT T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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RCD080N25TL | Rohm Semiconductor |
Trans MOSFET N-CH Si 250V 8A 3-Pin(2+Tab) CPT T/R |
auf Bestellung 2179 Stücke: Lieferzeit 14-21 Tag (e) |
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RCD080N25TL | Rohm Semiconductor |
Description: MOSFET N-CH 250V 8A CPT3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V Power Dissipation (Max): 850mW (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V |
auf Bestellung 5359 Stücke: Lieferzeit 10-14 Tag (e) |
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RCD080N25TL | ROHM Semiconductor |
MOSFETs Nch 250V 8A MOSFET |
auf Bestellung 2661 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RCD080N25TL |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH Si 250V 8A 3-Pin(2+Tab) CPT T/R
Trans MOSFET N-CH Si 250V 8A 3-Pin(2+Tab) CPT T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 124+ | 1.44 EUR |
| 250+ | 1.36 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.21 EUR |
| 2500+ | 1.15 EUR |
| RCD080N25TL |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH Si 250V 8A 3-Pin(2+Tab) CPT T/R
Trans MOSFET N-CH Si 250V 8A 3-Pin(2+Tab) CPT T/R
auf Bestellung 2179 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 124+ | 1.44 EUR |
| 250+ | 1.36 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.21 EUR |
| RCD080N25TL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 8A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Description: MOSFET N-CH 250V 8A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
auf Bestellung 5359 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.14 EUR |
| 10+ | 2.61 EUR |
| 100+ | 2.07 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.49 EUR |
| RCD080N25TL |
|
Hersteller: ROHM Semiconductor
MOSFETs Nch 250V 8A MOSFET
MOSFETs Nch 250V 8A MOSFET
auf Bestellung 2661 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.2 EUR |
| 10+ | 2.67 EUR |
| 100+ | 2.12 EUR |
| 250+ | 1.96 EUR |
| 500+ | 1.77 EUR |
| 1000+ | 1.52 EUR |
| 2500+ | 1.44 EUR |