RCD080N25TL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 8A CPT3
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.19 EUR |
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Technische Details RCD080N25TL Rohm Semiconductor
Description: MOSFET N-CH 250V 8A CPT3, Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: CPT3, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 850mW (Ta), 20W (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote RCD080N25TL nach Preis ab 1.21 EUR bis 2.69 EUR
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RCD080N25TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 250V 8A CPT3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V Power Dissipation (Max): 850mW (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V |
auf Bestellung 5359 Stücke: Lieferzeit 10-14 Tag (e) |
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RCD080N25TL | Hersteller : ROHM Semiconductor |
MOSFETs Nch 250V 8A MOSFET |
auf Bestellung 2661 Stücke: Lieferzeit 10-14 Tag (e) |
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