RCD080N25TL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 250V 8A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.19 EUR |
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Technische Details RCD080N25TL Rohm Semiconductor
Description: MOSFET N-CH 250V 8A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V, Power Dissipation (Max): 850mW (Ta), 20W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: CPT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V.
Weitere Produktangebote RCD080N25TL nach Preis ab 0.94 EUR bis 3.98 EUR
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RCD080N25TL | Hersteller : Rohm Semiconductor |
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RCD080N25TL | Hersteller : Rohm Semiconductor |
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RCD080N25TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 250V 8A CPT3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V Power Dissipation (Max): 850mW (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V |
auf Bestellung 5359 Stücke: Lieferzeit 10-14 Tag (e) |
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RCD080N25TL | Hersteller : ROHM Semiconductor |
MOSFET Nch 250V 8A MOSFET |
auf Bestellung 2731 Stücke: Lieferzeit 14-28 Tag (e) |
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