RCD100N20TL Rohm Semiconductor
auf Bestellung 2061 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 230+ | 0.64 EUR |
| 237+ | 0.60 EUR |
| 240+ | 0.57 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.51 EUR |
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Technische Details RCD100N20TL Rohm Semiconductor
Description: MOSFET N-CH 200V 10A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V, Power Dissipation (Max): 850mW (Ta), 20W (Tc), Vgs(th) (Max) @ Id: 5.25V @ 1mA, Supplier Device Package: CPT3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V.
Weitere Produktangebote RCD100N20TL nach Preis ab 0.96 EUR bis 1.41 EUR
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RCD100N20TL | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH Si 200V 10A Automotive 3-Pin(2+Tab) CPT T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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RCD100N20TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 200V 10A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V Power Dissipation (Max): 850mW (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 5.25V @ 1mA Supplier Device Package: CPT3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
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RCD100N20TL | Hersteller : ROHM Semiconductor |
MOSFETs PWR MOSFET LOW RESIST DEVICE |
Produkt ist nicht verfügbar |