RCD100N20TL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 10A CPT3
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details RCD100N20TL Rohm Semiconductor
Description: MOSFET N-CH 200V 10A CPT3, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: CPT3, Vgs(th) (Max) @ Id: 5.25V @ 1mA, Power Dissipation (Max): 850mW (Ta), 20W (Tc), Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
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RCD100N20TL | Hersteller : ROHM Semiconductor |
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