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RCJ100N25TL

RCJ100N25TL Rohm Semiconductor

datasheet?p=RCJ100N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 10A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 5A, 10V
Power Dissipation (Max): 1.56W (Ta), 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
auf Bestellung 848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
10+2.15 EUR
100+1.67 EUR
500+1.42 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RCJ100N25TL Rohm Semiconductor

Description: MOSFET N-CH 250V 10A LPT, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 5A, 10V, Power Dissipation (Max): 1.56W (Ta), 85W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: LPTS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V.

Weitere Produktangebote RCJ100N25TL nach Preis ab 1.14 EUR bis 2.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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RCJ100N25TL RCJ100N25TL Hersteller : ROHM Semiconductor datasheet?p=RCJ100N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFETs 10V Drive Nch MOSFET
auf Bestellung 1840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.64 EUR
10+2.18 EUR
100+1.55 EUR
500+1.34 EUR
1000+1.24 EUR
2000+1.14 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
RCJ100N25TL RCJ100N25TL Hersteller : Rohm Semiconductor datasheet?p=RCJ100N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 10A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 5A, 10V
Power Dissipation (Max): 1.56W (Ta), 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
10+2.24 EUR
100+1.78 EUR
500+1.51 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
RCJ100N25TL RCJ100N25TL Hersteller : Rohm Semiconductor datasheet?p=RCJ100N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 10A LPT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 5A, 10V
Power Dissipation (Max): 1.56W (Ta), 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
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Im Einkaufswagen  Stück im Wert von  UAH