RCJ330N25TL Rohm Semiconductor
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 75+ | 5.97 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RCJ330N25TL Rohm Semiconductor
Description: MOSFET N-CH 250V 33A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V, Power Dissipation (Max): 1.56W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: LPTS, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V.
Weitere Produktangebote RCJ330N25TL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| RCJ330N25TL | Hersteller : ROHM SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 211W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 33A Pulsed drain current: 132A Power dissipation: 211W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
RCJ330N25TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 250V 33A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
|
RCJ330N25TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 250V 33A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
RCJ330N25TL | Hersteller : ROHM Semiconductor |
MOSFET N-Channel Mosfet 250V, 33A, 10V gate drive |
Produkt ist nicht verfügbar |
|
| RCJ330N25TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 211W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 33A Pulsed drain current: 132A Power dissipation: 211W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |