RCJ510N25TL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 250V 51A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 3.50 EUR |
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Technische Details RCJ510N25TL Rohm Semiconductor
Description: MOSFET N-CH 250V 51A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V, Power Dissipation (Max): 1.56W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: LPTS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V.
Weitere Produktangebote RCJ510N25TL nach Preis ab 3.97 EUR bis 9.42 EUR
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RCJ510N25TL | Hersteller : ROHM Semiconductor |
MOSFET 10V Drive Nch MOSFET |
auf Bestellung 930 Stücke: Lieferzeit 10-14 Tag (e) |
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RCJ510N25TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 250V 51A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V |
auf Bestellung 4977 Stücke: Lieferzeit 10-14 Tag (e) |
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RCJ510N25TL Produktcode: 101701
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Lieblingsprodukt
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8542399000 8542 39 90 00 |
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| RCJ510N25TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK Drain-source voltage: 250V Drain current: 51A On-state resistance: 155mΩ Type of transistor: N-MOSFET Power dissipation: 304W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.12µC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 160A Mounting: SMD Case: D2PAK Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| RCJ510N25TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK Drain-source voltage: 250V Drain current: 51A On-state resistance: 155mΩ Type of transistor: N-MOSFET Power dissipation: 304W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.12µC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 160A Mounting: SMD Case: D2PAK |
Produkt ist nicht verfügbar |