| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.43 EUR |
| 10+ | 2.08 EUR |
| 100+ | 1.74 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.04 EUR |
| 2500+ | 1 EUR |
| 5000+ | 0.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RCX051N25 ROHM Semiconductor
Description: MOSFET N-CH 250V 5A TO220FM, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220FM, Vgs(th) (Max) @ Id: 5.5V @ 1mA, Power Dissipation (Max): 2.23W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.
Weitere Produktangebote RCX051N25 nach Preis ab 1.52 EUR bis 3.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RCX051N25 | Rohm Semiconductor |
 Description: MOSFET N-CH 250V 5A TO220FMInput Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 5.5V @ 1mA Power Dissipation (Max): 2.23W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
auf Bestellung 397 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RCX051N25 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 5A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 2.23W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 250V 5A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 2.23W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 397 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.56 EUR |
| 10+ | 2.26 EUR |
| 100+ | 1.52 EUR |