
auf Bestellung 465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 2.04 EUR |
10+ | 1.75 EUR |
100+ | 1.46 EUR |
500+ | 1.09 EUR |
1000+ | 0.87 EUR |
2500+ | 0.84 EUR |
5000+ | 0.81 EUR |
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Technische Details RCX051N25 ROHM Semiconductor
Description: MOSFET N-CH 250V 5A TO220FM, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V, Power Dissipation (Max): 2.23W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: TO-220FM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Weitere Produktangebote RCX051N25 nach Preis ab 1.28 EUR bis 2.99 EUR
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RCX051N25 | Hersteller : Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V Power Dissipation (Max): 2.23W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
auf Bestellung 397 Stücke: Lieferzeit 10-14 Tag (e) |
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