| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.03 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.89 EUR |
| 2500+ | 0.86 EUR |
| 5000+ | 0.83 EUR |
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Technische Details RCX081N20 ROHM Semiconductor
Description: MOSFET N-CH 200V 8A TO220FM, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FM, Vgs(th) (Max) @ Id: 5.25V @ 1mA, Power Dissipation (Max): 2.23W (Ta), 40W (Tc), Rds On (Max) @ Id, Vgs: 770mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.
Weitere Produktangebote RCX081N20
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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RCX081N20 | Rohm Semiconductor |
 Description: MOSFET N-CH 200V 8A TO220FMInput Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 5.25V @ 1mA Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 770mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RCX081N20 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 8A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 770mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 200V 8A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 770mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH