RCX200N20 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 200V 20A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 118 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.53 EUR |
| 10+ | 2.07 EUR |
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Technische Details RCX200N20 Rohm Semiconductor
Description: MOSFET N-CH 200V 20A TO220FM, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V, Power Dissipation (Max): 2.23W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V.
Weitere Produktangebote RCX200N20 nach Preis ab 1.00 EUR bis 2.57 EUR
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RCX200N20 | Hersteller : ROHM Semiconductor |
MOSFET 10V Drive Nch MOSFET |
auf Bestellung 105 Stücke: Lieferzeit 10-14 Tag (e) |
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| RCX200N20 | Hersteller : ROHM SEMICONDUCTOR |
RCX200N20 THT N channel transistors |
Produkt ist nicht verfügbar |