RCX330N25 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 33A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Description: MOSFET N-CH 250V 33A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
auf Bestellung 474 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.25 EUR |
10+ | 5.62 EUR |
100+ | 4.6 EUR |
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Produktbewertung abgeben
Technische Details RCX330N25 Rohm Semiconductor
Description: MOSFET N-CH 250V 33A TO220FM, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), Power Dissipation (Max): 2.23W (Ta), 40W (Tc), Supplier Device Package: TO-220FM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V.
Weitere Produktangebote RCX330N25 nach Preis ab 3.9 EUR bis 8.01 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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RCX330N25 | Hersteller : ROHM Semiconductor | MOSFET Nch 250V 33A MOSFET |
auf Bestellung 702 Stücke: Lieferzeit 14-28 Tag (e) |
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RCX330N25 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RCX330N25 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 33A Pulsed drain current: 132A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RCX330N25 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 33A Pulsed drain current: 132A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |