RD3G03BATTL1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: PCH -40V -35A POWER MOSFET - RD3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 35A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
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Technische Details RD3G03BATTL1 Rohm Semiconductor
Description: PCH -40V -35A POWER MOSFET - RD3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 19.1mOhm @ 35A, 10V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V.
Weitere Produktangebote RD3G03BATTL1 nach Preis ab 0.94 EUR bis 3.9 EUR
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RD3G03BATTL1 | ROHM Semiconductor |
MOSFETs Transistor, MOSFET Pch, -40V(Vdss), -35A(Id), (4.5V, 6.0V Drive) |
auf Bestellung 1386 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3G03BATTL1 | Rohm Semiconductor |
Description: PCH -40V -35A POWER MOSFET - RD3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 19.1mOhm @ 35A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V |
auf Bestellung 4368 Stücke: Lieferzeit 10-14 Tag (e) |
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| RD3G03BATTL1 | ROHM - Japan |
Transistor P-Channel MOSFET; 40V; 20V; 19,1mOhm; 35A; 56W; -55°C~150°C; RD3G03BATTL1 TRD3G03BATTL1 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| RD3G03BATTL1 |
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Hersteller: ROHM Semiconductor
MOSFETs Transistor, MOSFET Pch, -40V(Vdss), -35A(Id), (4.5V, 6.0V Drive)
MOSFETs Transistor, MOSFET Pch, -40V(Vdss), -35A(Id), (4.5V, 6.0V Drive)
auf Bestellung 1386 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.29 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.04 EUR |
| 2500+ | 0.94 EUR |
| RD3G03BATTL1 |
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Hersteller: Rohm Semiconductor
Description: PCH -40V -35A POWER MOSFET - RD3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 35A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Description: PCH -40V -35A POWER MOSFET - RD3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 35A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
auf Bestellung 4368 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.34 EUR |
| 10+ | 2.14 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 1.05 EUR |
| RD3G03BATTL1 |
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Hersteller: ROHM - Japan
Transistor P-Channel MOSFET; 40V; 20V; 19,1mOhm; 35A; 56W; -55°C~150°C; RD3G03BATTL1 TRD3G03BATTL1
Anzahl je Verpackung: 10 Stücke
Transistor P-Channel MOSFET; 40V; 20V; 19,1mOhm; 35A; 56W; -55°C~150°C; RD3G03BATTL1 TRD3G03BATTL1
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 3.9 EUR |