RD3G07BATTL1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: PCH -40V -70A POWER MOSFET - RD3
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.61 EUR |
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Technische Details RD3G07BATTL1 Rohm Semiconductor
Description: PCH -40V -70A POWER MOSFET - RD3, Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 101W (Tc), Rds On (Max) @ Id, Vgs: 7.1mOhm @ 70A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote RD3G07BATTL1 nach Preis ab 1.66 EUR bis 5.02 EUR
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RD3G07BATTL1 | Hersteller : Rohm Semiconductor |
Description: PCH -40V -70A POWER MOSFET - RD3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 70A, 10V Power Dissipation (Max): 101W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 20 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3G07BATTL1 | Hersteller : ROHM Semiconductor |
MOSFETs Transistor, MOSFET Pch, -40V(Vdss), -70A(Id), (4.5V, 6.0V Drive) |
auf Bestellung 11065 Stücke: Lieferzeit 10-14 Tag (e) |
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| RD3G07BATTL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Pulsed drain current: -140A Drain current: -70A Drain-source voltage: -40V Gate charge: 105nC On-state resistance: 8.7mΩ Gate-source voltage: ±20V Power dissipation: 101W |
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