RD3G08BBJHRBTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: PCH -40V -80A, TO-252 (DPAK), PO
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 1954 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.14 EUR |
| 10+ | 3.44 EUR |
| 100+ | 2.62 EUR |
| 500+ | 2.37 EUR |
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Technische Details RD3G08BBJHRBTL Rohm Semiconductor
Description: PCH -40V -80A, TO-252 (DPAK), PO, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V, Power Dissipation (Max): 142W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +5V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote RD3G08BBJHRBTL nach Preis ab 1.70 EUR bis 3.96 EUR
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RD3G08BBJHRBTL | Hersteller : ROHM |
Description: ROHM - RD3G08BBJHRBTL - Leistungs-MOSFET, p-Kanal, 40 V, 80 A, 0.0049 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 142W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0049ohm SVHC: To Be Advised |
auf Bestellung 465 Stücke: Lieferzeit 14-21 Tag (e) |
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| RD3G08BBJHRBTL | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 40V 80A 3-Pin(2+Tab) DPAK Automotive AEC-Q101 |
auf Bestellung 1950 Stücke: Lieferzeit 14-21 Tag (e) |
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| RD3G08BBJHRBTL | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 40V 80A 3-Pin(2+Tab) DPAK Automotive AEC-Q101 |
auf Bestellung 2335 Stücke: Lieferzeit 14-21 Tag (e) |
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RD3G08BBJHRBTL | Hersteller : Rohm Semiconductor |
Description: PCH -40V -80A, TO-252 (DPAK), PO Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 20 V Qualification: AEC-Q101 |
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