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RD3G500GNTL

RD3G500GNTL ROHM Semiconductor

datasheet?p=RD3G500GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
MOSFETs Transistor, MOSFET Nch, 40V(Vdss), 50.0A(Id), (4.5V Drive)
auf Bestellung 1674 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.66 EUR
10+2.01 EUR
100+1.46 EUR
500+1.24 EUR
1000+1.14 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RD3G500GNTL ROHM Semiconductor

Description: MOSFET N-CH 40V 50A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V.

Weitere Produktangebote RD3G500GNTL nach Preis ab 1.23 EUR bis 2.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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RD3G500GNTL RD3G500GNTL Hersteller : Rohm Semiconductor datasheet?p=RD3G500GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V
auf Bestellung 758 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
10+2.04 EUR
100+1.48 EUR
500+1.23 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
RD3G500GNTL RD3G500GNTL Hersteller : Rohm Semiconductor datasheet?p=RD3G500GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RD3G500GNTL Hersteller : ROHM SEMICONDUCTOR datasheet?p=RD3G500GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 31nC
On-state resistance: 6.3mΩ
Power dissipation: 35W
Drain current: 50A
Pulsed drain current: 100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH