RD3G500GNTL

RD3G500GNTL ROHM Semiconductor


datasheet?p=RD3G500GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
MOSFETs RD3G500GN is the low on - resistance MOSFET for switching application.
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Lieferzeit 10-14 Tag (e)
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2+2.59 EUR
10+2.16 EUR
100+1.53 EUR
250+1.52 EUR
500+1.25 EUR
1000+1.16 EUR
2500+1.13 EUR
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Technische Details RD3G500GNTL ROHM Semiconductor

Description: MOSFET N-CH 40V 50A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V.

Weitere Produktangebote RD3G500GNTL nach Preis ab 1.27 EUR bis 3.94 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RD3G500GNTL RD3G500GNTL Hersteller : Rohm Semiconductor datasheet?p=RD3G500GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V
auf Bestellung 2268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
10+2.53 EUR
100+1.72 EUR
500+1.38 EUR
1000+1.27 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
RD3G500GNTL Hersteller : ROHM SEMICONDUCTOR datasheet?p=RD3G500GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key RD3G500GNTL SMD N channel transistors
Produkt ist nicht verfügbar
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RD3G500GNTL RD3G500GNTL Hersteller : Rohm Semiconductor datasheet?p=RD3G500GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH