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RD3G600GNTL

RD3G600GNTL ROHM Semiconductor

datasheet?p=RD3G600GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
MOSFETs Transistor, MOSFET Nch, 40V(Vdss), 60.0A(Id), (4.5V Drive)
auf Bestellung 2783 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.92 EUR
10+2.34 EUR
100+1.68 EUR
500+1.37 EUR
1000+1.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RD3G600GNTL ROHM Semiconductor

Description: MOSFET N-CH 40V 60A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 20 V.

Weitere Produktangebote RD3G600GNTL nach Preis ab 1.47 EUR bis 4.49 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RD3G600GNTL RD3G600GNTL Hersteller : Rohm Semiconductor datasheet?p=RD3G600GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 20 V
auf Bestellung 2427 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.49 EUR
10+2.89 EUR
100+1.98 EUR
500+1.59 EUR
1000+1.47 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
RD3G600GNTL RD3G600GNTL Hersteller : Rohm Semiconductor datasheet?p=RD3G600GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 40V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH