Produkte > ROHM SEMICONDUCTOR > RD3G600GNTL
RD3G600GNTL

RD3G600GNTL Rohm Semiconductor

datasheet?p=RD3G600GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 20 V
auf Bestellung 2466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+2.97 EUR
10+ 2.46 EUR
100+ 1.96 EUR
500+ 1.66 EUR
1000+ 1.41 EUR
Mindestbestellmenge: 6
Produktrezensionen
Produktbewertung abgeben

Technische Details RD3G600GNTL Rohm Semiconductor

Description: MOSFET N-CH 40V 60A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 20 V.

Weitere Produktangebote RD3G600GNTL nach Preis ab 1.34 EUR bis 3.01 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RD3G600GNTL RD3G600GNTL Hersteller : ROHM Semiconductor datasheet?p=RD3G600GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET RD3G600GN is a power MOSFET with low-on resistance and High power package (TO-252), suitable for switching.
auf Bestellung 2829 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.01 EUR
10+ 2.5 EUR
100+ 1.99 EUR
250+ 1.83 EUR
500+ 1.67 EUR
1000+ 1.43 EUR
2500+ 1.34 EUR
RD3G600GNTL RD3G600GNTL Hersteller : Rohm Semiconductor datasheet?p=RD3G600GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 40V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 20 V
Produkt ist nicht verfügbar