RD3H045SPTL1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 4.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 9+ | 2.06 EUR |
| 10+ | 1.84 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 0.94 EUR |
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Technische Details RD3H045SPTL1 Rohm Semiconductor
Description: MOSFET P-CH 45V 4.5A TO252, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Drain to Source Voltage (Vdss): 45 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 15W (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Weitere Produktangebote RD3H045SPTL1 nach Preis ab 1.23 EUR bis 2.13 EUR
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RD3H045SPTL1 | Hersteller : ROHM Semiconductor |
MOSFET Pch -45V -4.5A TO-252 (DPAK) |
auf Bestellung 4270 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3H045SPTL1 | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 45V 4.5A TO252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
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