| Anzahl | Preis |
|---|---|
| 2+ | 2.08 EUR |
| 10+ | 1.88 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 0.95 EUR |
| 2500+ | 0.92 EUR |
| 5000+ | 0.89 EUR |
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Technische Details RD3H080SPTL1 ROHM Semiconductor
Description: MOSFET P-CH 45V 8A TO252, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V, Drain to Source Voltage (Vdss): 45 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 15W (Tc), Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote RD3H080SPTL1 nach Preis ab 1.03 EUR bis 3.06 EUR
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RD3H080SPTL1 | Rohm Semiconductor |
 Description: MOSFET P-CH 45V 8A TO252Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
auf Bestellung 761 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RD3H080SPTL1 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 8A TO252
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description: MOSFET P-CH 45V 8A TO252
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 761 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.06 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.03 EUR |