RD3H160SPFRATL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 16A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
| Anzahl | Preis |
|---|---|
| 2500+ | 1.08 EUR |
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Technische Details RD3H160SPFRATL Rohm Semiconductor
Description: MOSFET P-CH 45V 16A TO252, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V, Drain to Source Voltage (Vdss): 45 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount.
Weitere Produktangebote RD3H160SPFRATL nach Preis ab 0.96 EUR bis 3.75 EUR
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RD3H160SPFRATL | Hersteller : ROHM Semiconductor |
MOSFETs Pch -45V Vdss -16A TO-252(DPAK); TO-252 |
auf Bestellung 4978 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3H160SPFRATL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 45V 16A TO252 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 2751 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3H160SPFRATL | Hersteller : ROHM |
Description: ROHM - RD3H160SPFRATL - Leistungs-MOSFET, p-Kanal, 45 V, 16 A, 0.035 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 45V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 20W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.035ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 6922 Stücke: Lieferzeit 14-21 Tag (e) |