RD3L01BATTL1 Rohm Semiconductor
auf Bestellung 2300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 114+ | 1.38 EUR |
| 119+ | 1.27 EUR |
| 250+ | 1.17 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1.01 EUR |
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Technische Details RD3L01BATTL1 Rohm Semiconductor
Description: PCH -60V -10A POWER MOSFET - RD3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 84mOhm @ 10A, 10V, Power Dissipation (Max): 26W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V.
Weitere Produktangebote RD3L01BATTL1 nach Preis ab 0.63 EUR bis 1.81 EUR
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RD3L01BATTL1 | Hersteller : Rohm Semiconductor |
 Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1193 Stücke: Lieferzeit 14-21 Tag (e) |
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RD3L01BATTL1 | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 4052 Stücke: Lieferzeit 14-21 Tag (e) |
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RD3L01BATTL1 | Hersteller : Rohm Semiconductor |
Description: PCH -60V -10A POWER MOSFET - RD3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 84mOhm @ 10A, 10V Power Dissipation (Max): 26W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V |
auf Bestellung 4966 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3L01BATTL1 | Hersteller : ROHM Semiconductor |
MOSFET Pch -60V -10A Power MOSFET |
auf Bestellung 36432 Stücke: Lieferzeit 10-14 Tag (e) |
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| RD3L01BATTL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W Power dissipation: 26W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -10A On-state resistance: 93mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RD3L01BATTL1 | Hersteller : Rohm Semiconductor |
Description: PCH -60V -10A POWER MOSFET - RD3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 84mOhm @ 10A, 10V Power Dissipation (Max): 26W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V |
Produkt ist nicht verfügbar |
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| RD3L01BATTL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W Power dissipation: 26W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -10A On-state resistance: 93mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |