RD3L03BATTL1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: PCH -60V -35A POWER MOSFET - RD3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.96 EUR |
| 5000+ | 0.91 EUR |
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Technische Details RD3L03BATTL1 Rohm Semiconductor
Description: PCH -60V -35A POWER MOSFET - RD3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 30 V.
Weitere Produktangebote RD3L03BATTL1 nach Preis ab 0.6 EUR bis 2.36 EUR
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RD3L03BATTL1 | Hersteller : Rohm Semiconductor |
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RD3L03BATTL1 | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 60V 35A 3-Pin(2+Tab) DPAK T/R |
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RD3L03BATTL1 | Hersteller : Rohm Semiconductor |
Description: PCH -60V -35A POWER MOSFET - RD3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 30 V |
auf Bestellung 12958 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3L03BATTL1 | Hersteller : ROHM Semiconductor |
MOSFET Pch -60V -35A Power MOSFET |
auf Bestellung 30602 Stücke: Lieferzeit 10-14 Tag (e) |
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| RD3L03BATTL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W Power dissipation: 56W Polarisation: unipolar Kind of package: reel; tape Gate charge: 37nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -35A On-state resistance: 46mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RD3L03BATTL1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W Power dissipation: 56W Polarisation: unipolar Kind of package: reel; tape Gate charge: 37nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -35A On-state resistance: 46mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |