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RD3L07BBGTL1

RD3L07BBGTL1 ROHM Semiconductor

datasheet?p=RD3L07BBG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
MOSFET RD3L07BBG is a power MOSFET with low on - resistance, suitable for switching.
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.86 EUR
10+ 4.36 EUR
100+ 3.5 EUR
500+ 2.9 EUR
1000+ 2.5 EUR
2500+ 2.11 EUR
10000+ 2.08 EUR
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Technische Details RD3L07BBGTL1 ROHM Semiconductor

Description: NCH 60V 115A, TO-252, POWER MOSF, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V, Power Dissipation (Max): 102W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V.

Weitere Produktangebote RD3L07BBGTL1 nach Preis ab 2.54 EUR bis 5.17 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RD3L07BBGTL1 RD3L07BBGTL1 Hersteller : Rohm Semiconductor datasheet?p=RD3L07BBG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 115A, TO-252, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
auf Bestellung 2430 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.17 EUR
10+ 4.64 EUR
100+ 3.73 EUR
500+ 3.07 EUR
1000+ 2.54 EUR
Mindestbestellmenge: 4
RD3L07BBGTL1 RD3L07BBGTL1 Hersteller : Rohm Semiconductor datasheet?p=RD3L07BBG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 115A, TO-252, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
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