RD3L07BBGTL1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: NCH 60V 115A, TO-252, POWER MOSF
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
| Anzahl | Preis |
|---|---|
| 4+ | 5.17 EUR |
| 10+ | 4.64 EUR |
| 100+ | 3.73 EUR |
| 500+ | 3.07 EUR |
| 1000+ | 2.54 EUR |
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Technische Details RD3L07BBGTL1 Rohm Semiconductor
Description: NCH 60V 115A, TO-252, POWER MOSF, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 102W (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote RD3L07BBGTL1 nach Preis ab 2.06 EUR bis 5.67 EUR
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RD3L07BBGTL1 | Hersteller : ROHM Semiconductor |
MOSFETs RD3L07BBG is a power MOSFET with low on - resistance, suitable for switching. |
auf Bestellung 4908 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3L07BBGTL1 | Hersteller : Rohm Semiconductor |
Description: NCH 60V 115A, TO-252, POWER MOSF Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 102W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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