RD3P01BATTL1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: PCH -100V -10A POWER MOSFET: RD3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
| Anzahl | Preis |
|---|---|
| 7+ | 2.69 EUR |
| 11+ | 1.71 EUR |
| 100+ | 1.15 EUR |
| 500+ | 0.91 EUR |
| 1000+ | 0.83 EUR |
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Technische Details RD3P01BATTL1 Rohm Semiconductor
Description: PCH -100V -10A POWER MOSFET: RD3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 5A, 10V, Power Dissipation (Max): 25W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V.
Weitere Produktangebote RD3P01BATTL1 nach Preis ab 0.77 EUR bis 2.87 EUR
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RD3P01BATTL1 | Hersteller : ROHM Semiconductor |
MOSFETs Transistor, MOSFET Pch, -100V(Vdss), -10A(Id), (4.5V, 6.0V Drive) |
auf Bestellung 2370 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3P01BATTL1 | Hersteller : Rohm Semiconductor |
Description: PCH -100V -10A POWER MOSFET: RD3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 5A, 10V Power Dissipation (Max): 25W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V |
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