RD3P050SNFRATL ROHM Semiconductor
auf Bestellung 3035 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.22 EUR |
| 10+ | 1.7 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 0.97 EUR |
| 2500+ | 0.9 EUR |
| 5000+ | 0.87 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RD3P050SNFRATL ROHM Semiconductor
Description: MOSFET N-CH 100V 5A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V, Power Dissipation (Max): 15W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote RD3P050SNFRATL nach Preis ab 0.98 EUR bis 2.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RD3P050SNFRATL | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 100V 5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2023 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
RD3P050SNFRATL | Hersteller : ROHM |
Description: ROHM - RD3P050SNFRATL - Leistungs-MOSFET, n-Kanal, 100 V, 5 A, 0.135 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 15W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.135ohm |
auf Bestellung 1858 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
|
|
RD3P050SNFRATL | Hersteller : ROHM |
Description: ROHM - RD3P050SNFRATL - Leistungs-MOSFET, n-Kanal, 100 V, 5 A, 0.135 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 15W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.135ohm |
auf Bestellung 1858 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
|
|
RD3P050SNFRATL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 100V 5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |