RD3P050SNFRATL ROHM
Hersteller: ROHM
Description: ROHM - RD3P050SNFRATL - Leistungs-MOSFET, n-Kanal, 100 V, 5 A, 0.135 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 15W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.135ohm
SVHC: Lead (23-Jan-2024)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 2.44 EUR |
| 136+ | 1.58 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RD3P050SNFRATL ROHM
Description: MOSFET N-CH 100V 5A TO252, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 15W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote RD3P050SNFRATL nach Preis ab 0.95 EUR bis 4.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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RD3P050SNFRATL | Rohm Semiconductor |
Description: MOSFET N-CH 100V 5A TO252 Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 231 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3P050SNFRATL | ROHM Semiconductor |
MOSFETs Nch 100V Vdss 5A ID TO-252(DPAK); TO-252 |
auf Bestellung 3259 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3P050SNFRATL | ROHM |
Description: ROHM - RD3P050SNFRATL - Leistungs-MOSFET, n-Kanal, 100 V, 5 A, 0.135 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 15W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.135ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 1240 Stücke: Lieferzeit 14-21 Tag (e) |
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| RD3P050SNFRATL |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 231 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.68 EUR |
| 11+ | 2.03 EUR |
| 100+ | 1.51 EUR |
| RD3P050SNFRATL |
|
Hersteller: ROHM Semiconductor
MOSFETs Nch 100V Vdss 5A ID TO-252(DPAK); TO-252
MOSFETs Nch 100V Vdss 5A ID TO-252(DPAK); TO-252
auf Bestellung 3259 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.37 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.09 EUR |
| 2500+ | 1 EUR |
| 5000+ | 0.95 EUR |
| RD3P050SNFRATL |
|
Hersteller: ROHM
Description: ROHM - RD3P050SNFRATL - Leistungs-MOSFET, n-Kanal, 100 V, 5 A, 0.135 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 15W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.135ohm
SVHC: Lead (23-Jan-2024)
Description: ROHM - RD3P050SNFRATL - Leistungs-MOSFET, n-Kanal, 100 V, 5 A, 0.135 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 15W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.135ohm
SVHC: Lead (23-Jan-2024)
auf Bestellung 1240 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 4.47 EUR |
| 96+ | 2.44 EUR |
| 136+ | 1.58 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.12 EUR |