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RD3P050SNTL1

RD3P050SNTL1 Rohm Semiconductor


datasheet?p=RD3P050SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.6 EUR
5000+0.57 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RD3P050SNTL1 Rohm Semiconductor

Description: MOSFET N-CH 100V 5A TO252, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 15W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Weitere Produktangebote RD3P050SNTL1 nach Preis ab 0.57 EUR bis 1.44 EUR

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RD3P050SNTL1 RD3P050SNTL1 Hersteller : ROHM Semiconductor rd3p050sntl_e-1873190.pdf MOSFET Nch 100V 5A TO-252(DPAK)
auf Bestellung 6836 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.44 EUR
10+1.12 EUR
100+0.91 EUR
500+0.79 EUR
1000+0.64 EUR
2500+0.59 EUR
5000+0.57 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
RD3P050SNTL1 RD3P050SNTL1 Hersteller : Rohm Semiconductor datasheet?p=RD3P050SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 100V 5A TO252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
auf Bestellung 9312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
15+1.19 EUR
100+0.92 EUR
500+0.78 EUR
1000+0.64 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH