RD3P130SPFRATL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 13A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.18 EUR |
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Technische Details RD3P130SPFRATL Rohm Semiconductor
Description: MOSFET P-CH 100V 13A TO252, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote RD3P130SPFRATL nach Preis ab 1.26 EUR bis 3.75 EUR
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RD3P130SPFRATL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 100V 13A TO252 Qualification: AEC-Q101 Grade: Automotive Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 2870 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3P130SPFRATL | Hersteller : ROHM Semiconductor |
MOSFETs Pch -100V Vdss -13A TO-252(DPAK); TO-252 |
auf Bestellung 3418 Stücke: Lieferzeit 10-14 Tag (e) |
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