RD3P130SPFRATL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 100V 13A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.23 EUR |
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Technische Details RD3P130SPFRATL Rohm Semiconductor
Description: MOSFET P-CH 100V 13A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V, Power Dissipation (Max): 20W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote RD3P130SPFRATL nach Preis ab 1.32 EUR bis 4.12 EUR
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RD3P130SPFRATL | Hersteller : ROHM Semiconductor |
MOSFET Pch -100V Vdss -13A TO-252(DPAK); TO-252 |
auf Bestellung 9715 Stücke: Lieferzeit 10-14 Tag (e) |
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RD3P130SPFRATL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 100V 13A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3839 Stücke: Lieferzeit 10-14 Tag (e) |
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| RD3P130SPFRATL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -52A; 20W Polarisation: unipolar Type of transistor: P-MOSFET Power dissipation: 20W Kind of package: reel; tape Gate charge: 40nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -52A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -100V Drain current: -13A On-state resistance: 0.23Ω Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| RD3P130SPFRATL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -52A; 20W Polarisation: unipolar Type of transistor: P-MOSFET Power dissipation: 20W Kind of package: reel; tape Gate charge: 40nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -52A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -100V Drain current: -13A On-state resistance: 0.23Ω |
Produkt ist nicht verfügbar |