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RD3S100AAFRATL

RD3S100AAFRATL ROHM Semiconductor

datasheet?p=RD3S100AAFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
MOSFETs Transistor, MOSFET Nch, 190V(Vdss), 10.0A(Id), (10V Drive)
auf Bestellung 2992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.45 EUR
10+3.27 EUR
100+2.39 EUR
500+2.22 EUR
1000+2.04 EUR
2500+1.94 EUR
5000+1.88 EUR
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Technische Details RD3S100AAFRATL ROHM Semiconductor

Description: MOSFET N-CH 190V 10A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 190 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote RD3S100AAFRATL nach Preis ab 2.21 EUR bis 4.45 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RD3S100AAFRATL RD3S100AAFRATL Hersteller : Rohm Semiconductor datasheet?p=RD3S100AAFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 190V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1515 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
10+3.25 EUR
100+2.38 EUR
500+2.21 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
RD3S100AAFRATL RD3S100AAFRATL Hersteller : Rohm Semiconductor datasheet?p=RD3S100AAFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 190V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH