| Anzahl | Preis |
|---|---|
| 1+ | 3.61 EUR |
| 10+ | 2.78 EUR |
| 100+ | 2.02 EUR |
| 250+ | 2.01 EUR |
| 500+ | 1.66 EUR |
| 1000+ | 1.58 EUR |
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Technische Details RD3S100CNTL1 ROHM Semiconductor
Description: MOSFET N-CH 190V 10A TO252, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 190 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 85W (Tc), Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote RD3S100CNTL1 nach Preis ab 3.55 EUR bis 3.96 EUR
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RD3S100CNTL1 | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 190V 10A TO252Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 190 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 85 Stücke: Lieferzeit 10-14 Tag (e) |
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