| Anzahl | Preis |
|---|---|
| 2+ | 2.09 EUR |
| 10+ | 1.41 EUR |
| 100+ | 1.1 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.87 EUR |
| 2500+ | 0.79 EUR |
| 5000+ | 0.75 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RD3T050CNTL1 ROHM Semiconductor
Description: MOSFET N-CH 200V 5A TO252, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 5.25V @ 1mA, Power Dissipation (Max): 29W (Tc), Rds On (Max) @ Id, Vgs: 760mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote RD3T050CNTL1 nach Preis ab 1.06 EUR bis 2.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RD3T050CNTL1 | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 200V 5A TO252Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 5.25V @ 1mA Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 760mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 2459 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
RD3T050CNTL1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 200V 5A TO252 Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 5.25V @ 1mA Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 760mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |