auf Bestellung 2417 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 2.08 EUR |
| 29+ | 1.83 EUR |
| 100+ | 1.41 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 0.95 EUR |
| 2500+ | 0.81 EUR |
| 10000+ | 0.73 EUR |
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Technische Details RDD023N50TL ROHM Semiconductor
Description: MOSFET N-CH 500V 2A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 5.4Ohm @ 1A, 10V, Power Dissipation (Max): 20W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: CPT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 25 V.
Weitere Produktangebote RDD023N50TL
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RDD023N50TL | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 500V 2A CPT3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 5.4Ohm @ 1A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 25 V |
Produkt ist nicht verfügbar |
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RDD023N50TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 500V 2A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 5.4Ohm @ 1A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 25 V |
Produkt ist nicht verfügbar |