RDD050N20TL ROHM Semiconductor

Description: MOSFET N-CH 200V 5A CPT3, Packaging: Tape & Reel (TR), Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: CPT3, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.