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RDD050N20TL

RDD050N20TL ROHM Semiconductor

rohm_semiconductor_rohms10729-1-1742356.pdf Hersteller: ROHM Semiconductor
MOSFET Nch; 20W; 200V; 5A
auf Bestellung 1272 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.62 EUR
10+ 2.18 EUR
100+ 1.74 EUR
250+ 1.6 EUR
500+ 1.46 EUR
1000+ 1.25 EUR
2500+ 1.17 EUR
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Technische Details RDD050N20TL ROHM Semiconductor

Description: MOSFET N-CH 200V 5A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V, Power Dissipation (Max): 20W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: CPT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V.

Weitere Produktangebote RDD050N20TL nach Preis ab 2.17 EUR bis 2.62 EUR

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RDD050N20TL RDD050N20TL Hersteller : Rohm Semiconductor RDD050N20.pdf Description: MOSFET N-CH 200V 5A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.62 EUR
10+ 2.17 EUR
Mindestbestellmenge: 7
RDD050N20TL RDD050N20TL Hersteller : Rohm Semiconductor RDD050N20.pdf Description: MOSFET N-CH 200V 5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
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