| Anzahl | Privatkunde |
|---|---|
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| 10+ | 3.01 EUR |
| 100+ | 2.07 EUR |
| 500+ | 1.75 EUR |
| 1000+ | 1.55 EUR |
| 2500+ | 1.46 EUR |
| 5000+ | 1.39 EUR |
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Technische Details RDD050N20TL ROHM Semiconductor
Description: MOSFET N-CH 200V 5A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V, Power Dissipation (Max): 20W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: CPT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V.
Weitere Produktangebote RDD050N20TL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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RDD050N20TL | Rohm Semiconductor |
 Description: MOSFET N-CH 200V 5A CPT3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RDD050N20TL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Description: MOSFET N-CH 200V 5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH