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RE1C002UNTCL

RE1C002UNTCL Rohm Semiconductor

re1c002untcl-e.pdf
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 200MA EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
auf Bestellung 879000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.065 EUR
6000+0.058 EUR
9000+0.054 EUR
15000+0.05 EUR
21000+0.048 EUR
30000+0.046 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RE1C002UNTCL Rohm Semiconductor

Description: MOSFET N-CH 20V 200MA EMT3F, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 2.5V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: EMT3F (SOT-416FL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V.

Weitere Produktangebote RE1C002UNTCL nach Preis ab 0.049 EUR bis 0.33 EUR

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RE1C002UNTCL RE1C002UNTCL Hersteller : ROHM Semiconductor re1c002untcl-e.pdf MOSFETs 1.2V Drive Nch MOSFET
auf Bestellung 77015 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+0.3 EUR
16+0.19 EUR
100+0.12 EUR
500+0.084 EUR
1000+0.074 EUR
3000+0.055 EUR
6000+0.049 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
RE1C002UNTCL RE1C002UNTCL Hersteller : Rohm Semiconductor re1c002untcl-e.pdf Description: MOSFET N-CH 20V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
auf Bestellung 880560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
90+0.2 EUR
145+0.12 EUR
500+0.089 EUR
1000+0.078 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
RE1C002UNTCL re1c002untcl-e.pdf N-канальний ПТ, Udss, В = 20, Id = 0,2 А, Ciss, пФ @ Uds, В = 25 @ 10, Rds = 1,2 Ом @ 100 мА, 2,5 В, Ugs(th) = 1 В @ 1 мА, Р, Вт = 0,15, Тексп, °C = -55...+150, Тип монт. = SMD,... Група товару: Транзистори Корпус: SOT-490 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 7 Stücke:
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