RE1C002ZPTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 20V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
auf Bestellung 3310 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 1.07 EUR |
| 33+ | 0.79 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.23 EUR |
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Technische Details RE1C002ZPTL Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA EMT3F, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1V @ 100µA, Supplier Device Package: EMT3F (SOT-416FL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V.
Weitere Produktangebote RE1C002ZPTL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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RE1C002ZPTL | Hersteller : ROHM |
Description: ROHM - RE1C002ZPTL - Leistungs-MOSFET, p-Kanal, 20 V, 200 mA, 0.8 ohm, SOT-416FL, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 150mW productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.8ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 2629 Stücke: Lieferzeit 14-21 Tag (e) |
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| RE1C002ZPTL | Hersteller : ROHM SEMICONDUCTOR |
RE1C002ZPTL SMD P channel transistors |
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RE1C002ZPTL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 20V 200MA EMT3F Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V |
Produkt ist nicht verfügbar |
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RE1C002ZPTL | Hersteller : ROHM Semiconductor |
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