RE1C002ZPTL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
| Anzahl | Preis |
|---|---|
| 32+ | 0.56 EUR |
| 52+ | 0.34 EUR |
| 100+ | 0.22 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
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Technische Details RE1C002ZPTL Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA EMT3F, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-89, SOT-490, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Part Status: Active, Supplier Device Package: EMT3F (SOT-416FL), Vgs(th) (Max) @ Id: 1V @ 100µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta).
Weitere Produktangebote RE1C002ZPTL nach Preis ab 0.092 EUR bis 0.57 EUR
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RE1C002ZPTL | Hersteller : ROHM Semiconductor |
MOSFETs RECOMMENDED ALT 755-RZM002P02T2L |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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RE1C002ZPTL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 20V 200MA EMT3F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4.5V Part Status: Active Supplier Device Package: EMT3F (SOT-416FL) Vgs(th) (Max) @ Id: 1V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
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