auf Bestellung 862 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 261+ | 2.05 EUR |
| 500+ | 1.77 EUR |
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Technische Details RF1S50N06LESM HARRIS
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V, Power Dissipation (Max): 142W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V.
Weitere Produktangebote RF1S50N06LESM nach Preis ab 1.77 EUR bis 2.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| RF1S50N06LESM | Hersteller : HARRIS |
 RF1S50N06LESM |
auf Bestellung 843 Stücke: Lieferzeit 14-21 Tag (e) |
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| RF1S50N06LESM | Hersteller : Harris Corporation |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
auf Bestellung 1705 Stücke: Lieferzeit 10-14 Tag (e) |
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