RF1S70N03

RF1S70N03 Harris Corporation


HRISS982-1.pdf?t.download=true&u=5oefqw Hersteller: Harris Corporation
Description: MOSFET N-CH 30V 70A TO262AA
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 789 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
188+2.64 EUR
Mindestbestellmenge: 188
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Technische Details RF1S70N03 Harris Corporation

Description: MOSFET N-CH 30V 70A TO262AA, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262AA, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V.

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RF1S70N03 HRISS982-1.pdf?t.download=true&u=5oefqw
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)