Technische Details RF4C100BCTCR Rohm Semiconductor
Description: MOSFET P-CH 20V 10A HUML2020L8, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: HUML2020L8, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerUDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote RF4C100BCTCR nach Preis ab 0.52 EUR bis 2.34 EUR
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RF4C100BCTCR | Rohm Semiconductor |
 Trans MOSFET P-CH 20V 10A 8-Pin HUML EP T/R |
auf Bestellung 4610 Stücke: Lieferzeit 14-21 Tag (e) |
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RF4C100BCTCR | ROHM Semiconductor |
MOSFETs Transistor, MOSFET Pch, -20V(Vdss), -10.0A(Id), (1.8V Drive) |
auf Bestellung 2140 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4C100BCTCR | Rohm Semiconductor |
Description: MOSFET P-CH 20V 10A HUML2020L8 Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.2V @ 1mA Power Dissipation (Max): 2W (Ta) |
auf Bestellung 668 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Rohm Semiconductor
Trans MOSFET P-CH 20V 10A 8-Pin HUML EP T/R
Trans MOSFET P-CH 20V 10A 8-Pin HUML EP T/R
auf Bestellung 4610 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 178+ | 1.81 EUR |
| RF4C100BCTCR |
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Hersteller: ROHM Semiconductor
MOSFETs Transistor, MOSFET Pch, -20V(Vdss), -10.0A(Id), (1.8V Drive)
MOSFETs Transistor, MOSFET Pch, -20V(Vdss), -10.0A(Id), (1.8V Drive)
auf Bestellung 2140 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.92 EUR |
| 10+ | 1.36 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.65 EUR |
| 3000+ | 0.57 EUR |
| 6000+ | 0.52 EUR |
| RF4C100BCTCR |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 10A HUML2020L8
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 2W (Ta)
Description: MOSFET P-CH 20V 10A HUML2020L8
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 2W (Ta)
auf Bestellung 668 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.34 EUR |
| 15+ | 1.48 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.76 EUR |