RF4C100BCTCR Rohm Semiconductor
auf Bestellung 5190 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 218+ | 0.66 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.44 EUR |
| 3000+ | 0.38 EUR |
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Technische Details RF4C100BCTCR Rohm Semiconductor
Description: MOSFET P-CH 20V 10A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: HUML2020L8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V.
Weitere Produktangebote RF4C100BCTCR nach Preis ab 0.47 EUR bis 2.06 EUR
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RF4C100BCTCR | Hersteller : Rohm Semiconductor |
 Trans MOSFET P-CH 20V 10A 8-Pin HUML EP T/R |
auf Bestellung 2598 Stücke: Lieferzeit 14-21 Tag (e) |
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RF4C100BCTCR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 20V 10A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V |
auf Bestellung 1350 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4C100BCTCR | Hersteller : ROHM Semiconductor |
MOSFETs Pch -20V -10A Middle Power MOSFET (Dimension: 2.0x2.0(t=0.6)) |
auf Bestellung 4246 Stücke: Lieferzeit 10-14 Tag (e) |
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| RF4C100BCTCR | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 20V 10A 8-Pin HUML EP T/R |
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| RF4C100BCTCR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -36A; 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 23.5nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -36A Mounting: SMD Case: DFN2020-8S Drain-source voltage: -20V Drain current: -10A On-state resistance: 15.6mΩ Type of transistor: P-MOSFET Power dissipation: 2W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RF4C100BCTCR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 20V 10A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V |
Produkt ist nicht verfügbar |
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| RF4C100BCTCR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -36A; 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 23.5nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -36A Mounting: SMD Case: DFN2020-8S Drain-source voltage: -20V Drain current: -10A On-state resistance: 15.6mΩ Type of transistor: P-MOSFET Power dissipation: 2W |
Produkt ist nicht verfügbar |