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RF4E060AJTCR

RF4E060AJTCR Rohm Semiconductor

rf4e060ajtcr-e.pdf Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 6A 8-Pin HUML EP T/R
auf Bestellung 2730 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
272+0.58 EUR
283+ 0.53 EUR
500+ 0.5 EUR
1000+ 0.46 EUR
2500+ 0.43 EUR
Mindestbestellmenge: 272
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Technische Details RF4E060AJTCR Rohm Semiconductor

Description: MOSFET N-CH 30V 6A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: HUML2020L8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V.

Weitere Produktangebote RF4E060AJTCR nach Preis ab 0.43 EUR bis 1.47 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RF4E060AJTCR RF4E060AJTCR Hersteller : Rohm Semiconductor datasheet?p=RF4E060AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 6A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
auf Bestellung 2249 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1 EUR
21+ 0.87 EUR
100+ 0.6 EUR
500+ 0.5 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 18
RF4E060AJTCR RF4E060AJTCR Hersteller : ROHM Semiconductor datasheet?p=RF4E060AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET RF4E060AJ is low on-resistance and ?igh power small mold package MOSFET for switching application.
auf Bestellung 2962 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
36+1.47 EUR
41+ 1.28 EUR
100+ 0.88 EUR
500+ 0.74 EUR
1000+ 0.63 EUR
3000+ 0.54 EUR
6000+ 0.53 EUR
Mindestbestellmenge: 36
RF4E060AJTCR RF4E060AJTCR Hersteller : Rohm Semiconductor datasheet?p=RF4E060AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 6A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
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