RF4E060AJTCR Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 272+ | 0.64 EUR |
| 283+ | 0.61 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.55 EUR |
| 2500+ | 0.52 EUR |
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Produktbewertung abgeben
Technische Details RF4E060AJTCR Rohm Semiconductor
Description: MOSFET N-CH 30V 6A HUML2020L8, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerUDFN, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: HUML2020L8.
Weitere Produktangebote RF4E060AJTCR nach Preis ab 0.4 EUR bis 1.73 EUR
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RF4E060AJTCR | Rohm Semiconductor |
 Trans MOSFET N-CH 30V 6A 8-Pin HUML EP T/R |
auf Bestellung 590 Stücke: Lieferzeit 14-21 Tag (e) |
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RF4E060AJTCR | ROHM Semiconductor |
MOSFETs Transistor, MOSFET Nch, 30V(Vdss), 6.0A(Id), (2.5V Drive) |
auf Bestellung 2684 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4E060AJTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 6A HUML2020L8 Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| RF4E060AJTCR |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 6A 8-Pin HUML EP T/R
Trans MOSFET N-CH 30V 6A 8-Pin HUML EP T/R
auf Bestellung 590 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 282+ | 0.67 EUR |
| 500+ | 0.51 EUR |
| RF4E060AJTCR |
|
Hersteller: ROHM Semiconductor
MOSFETs Transistor, MOSFET Nch, 30V(Vdss), 6.0A(Id), (2.5V Drive)
MOSFETs Transistor, MOSFET Nch, 30V(Vdss), 6.0A(Id), (2.5V Drive)
auf Bestellung 2684 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.73 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.79 EUR |
| 3000+ | 0.43 EUR |
| 6000+ | 0.4 EUR |
| RF4E060AJTCR |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 6A HUML2020L8
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Description: MOSFET N-CH 30V 6A HUML2020L8
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)