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RF4E070BNTR

RF4E070BNTR Rohm Semiconductor

rf4e070bntr-e.pdf Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 7A 8-Pin HUML T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
245+0.64 EUR
256+ 0.59 EUR
500+ 0.55 EUR
1000+ 0.51 EUR
2500+ 0.47 EUR
Mindestbestellmenge: 245
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Technische Details RF4E070BNTR Rohm Semiconductor

Description: MOSFET N-CH 30V 7A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 28.6mOhm @ 7A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: HUML2020L8, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V.

Weitere Produktangebote RF4E070BNTR nach Preis ab 0.92 EUR bis 2.32 EUR

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Preis ohne MwSt
RF4E070BNTR RF4E070BNTR Hersteller : Rohm Semiconductor datasheet?p=RF4E070BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.55 EUR
100+ 1.23 EUR
500+ 1.05 EUR
Mindestbestellmenge: 12
RF4E070BNTR RF4E070BNTR Hersteller : ROHM Semiconductor datasheet?p=RF4E070BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET 4.5V Drive Nch MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
23+2.32 EUR
28+ 1.91 EUR
100+ 1.49 EUR
500+ 1.26 EUR
1000+ 1.02 EUR
3000+ 0.95 EUR
6000+ 0.92 EUR
Mindestbestellmenge: 23
RF4E070BNTR RF4E070BNTR Hersteller : Rohm Semiconductor datasheet?p=RF4E070BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
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