RF4E075ATTCR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 30V 7.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.39 EUR |
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Technische Details RF4E075ATTCR Rohm Semiconductor
Description: MOSFET P-CH 30V 7.5A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: HUML2020L8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V.
Weitere Produktangebote RF4E075ATTCR nach Preis ab 0.44 EUR bis 1.5 EUR
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RF4E075ATTCR | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 30V 7.5A 8-Pin HUML EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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RF4E075ATTCR | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 30V 7.5A 8-Pin HUML EP T/R |
auf Bestellung 2580 Stücke: Lieferzeit 14-21 Tag (e) |
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RF4E075ATTCR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 7.5A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 21.7mOhm @ 7.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V |
auf Bestellung 7776 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4E075ATTCR | Hersteller : ROHM Semiconductor |
MOSFET Pch -30V -7.5A Middle Power MOSFET |
auf Bestellung 4730 Stücke: Lieferzeit 14-28 Tag (e) |
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RF4E075ATTCR | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 30V 7.5A 8-Pin HUML EP T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| RF4E075ATTCR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.5A; Idm: -30A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.5A Pulsed drain current: -30A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±20V On-state resistance: 21.7mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RF4E075ATTCR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.5A; Idm: -30A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.5A Pulsed drain current: -30A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±20V On-state resistance: 21.7mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |