Technische Details RF4E080BNTR Rohm Semiconductor
Description: MOSFET N-CH 30V 8A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: HUML2020L8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V.
Weitere Produktangebote RF4E080BNTR nach Preis ab 0.38 EUR bis 2.14 EUR
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RF4E080BNTR | ROHM SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S Power dissipation: 2W Kind of package: reel; tape Case: DFN2020-8S Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 14.5nC On-state resistance: 17.6mΩ Drain current: 8A Pulsed drain current: 32A Gate-source voltage: ±20V Drain-source voltage: 30V |
auf Bestellung 2953 Stücke: Lieferzeit 14-21 Tag (e) |
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RF4E080BNTR | Rohm Semiconductor |
Trans MOSFET N-CH 30V 8A 8-Pin HUML T/R |
auf Bestellung 5480 Stücke: Lieferzeit 14-21 Tag (e) |
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RF4E080BNTR | ROHM Semiconductor |
MOSFETs 4.5V Drive Nch MOSFET |
auf Bestellung 6862 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4E080BNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 8A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V |
auf Bestellung 1712 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4E080BNTR | Rohm Semiconductor |
Trans MOSFET N-CH 30V 8A 8-Pin HUML T/R |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RF4E080BNTR |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 14.5nC
On-state resistance: 17.6mΩ
Drain current: 8A
Pulsed drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 14.5nC
On-state resistance: 17.6mΩ
Drain current: 8A
Pulsed drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 2953 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 97+ | 0.88 EUR |
| 116+ | 0.74 EUR |
| 164+ | 0.52 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.38 EUR |
| RF4E080BNTR |
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Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 8A 8-Pin HUML T/R
Trans MOSFET N-CH 30V 8A 8-Pin HUML T/R
auf Bestellung 5480 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 266+ | 1.23 EUR |
| RF4E080BNTR |
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Hersteller: ROHM Semiconductor
MOSFETs 4.5V Drive Nch MOSFET
MOSFETs 4.5V Drive Nch MOSFET
auf Bestellung 6862 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 1.07 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.58 EUR |
| 3000+ | 0.46 EUR |
| 6000+ | 0.45 EUR |
| RF4E080BNTR |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 1712 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.14 EUR |
| 16+ | 1.33 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.62 EUR |
| RF4E080BNTR |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 8A 8-Pin HUML T/R
Trans MOSFET N-CH 30V 8A 8-Pin HUML T/R
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)