Produkte > ROHM SEMICONDUCTOR > RF4E100AJTCR
RF4E100AJTCR

RF4E100AJTCR Rohm Semiconductor

datasheet?p=RF4E100AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HUML2020L8
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.68 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details RF4E100AJTCR Rohm Semiconductor

Description: MOSFET N-CH 30V 10A HUML2020L8, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerUDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Part Status: Active, Supplier Device Package: HUML2020L8, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 2W (Tc), Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V.

Weitere Produktangebote RF4E100AJTCR nach Preis ab 0.54 EUR bis 2.67 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RF4E100AJTCR RF4E100AJTCR Rohm Semiconductor rf4e100ajtcr-e.pdf Trans MOSFET N-CH 30V 10A 8-Pin HUML EP T/R
auf Bestellung 1903 Stücke:
Lieferzeit 14-21 Tag (e)
187+0.94 EUR
250+0.88 EUR
500+0.83 EUR
1000+0.79 EUR
Mindestbestellmenge: 187 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RF4E100AJTCR RF4E100AJTCR ROHM SEMICONDUCTOR datasheet?p=RF4E100AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 12.4mΩ
Drain current: 10A
Pulsed drain current: 36A
Gate-source voltage: ±12V
Drain-source voltage: 30V
auf Bestellung 2780 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.75 EUR
78+1.11 EUR
116+0.74 EUR
500+0.58 EUR
1000+0.54 EUR
Mindestbestellmenge: 49 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RF4E100AJTCR RF4E100AJTCR Rohm Semiconductor datasheet?p=RF4E100AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 10A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
auf Bestellung 5915 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.64 EUR
13+1.65 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.77 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RF4E100AJTCR RF4E100AJTCR ROHM Semiconductor datasheet?p=RF4E100AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFETs Nch 30V 10A Si MOSFET
auf Bestellung 5746 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.67 EUR
10+1.68 EUR
100+1.11 EUR
500+0.87 EUR
1000+0.79 EUR
3000+0.69 EUR
6000+0.64 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RF4E100AJTCR rf4e100ajtcr-e.pdf
RF4E100AJTCR
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 10A 8-Pin HUML EP T/R
auf Bestellung 1903 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
187+0.94 EUR
250+0.88 EUR
500+0.83 EUR
1000+0.79 EUR
Mindestbestellmenge: 187 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RF4E100AJTCR datasheet?p=RF4E100AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E100AJTCR
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 12.4mΩ
Drain current: 10A
Pulsed drain current: 36A
Gate-source voltage: ±12V
Drain-source voltage: 30V
auf Bestellung 2780 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
49+1.75 EUR
78+1.11 EUR
116+0.74 EUR
500+0.58 EUR
1000+0.54 EUR
Mindestbestellmenge: 49 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RF4E100AJTCR datasheet?p=RF4E100AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E100AJTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
auf Bestellung 5915 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.64 EUR
13+1.65 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.77 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RF4E100AJTCR datasheet?p=RF4E100AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E100AJTCR
Hersteller: ROHM Semiconductor
MOSFETs Nch 30V 10A Si MOSFET
auf Bestellung 5746 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.67 EUR
10+1.68 EUR
100+1.11 EUR
500+0.87 EUR
1000+0.79 EUR
3000+0.69 EUR
6000+0.64 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH