RF4E100AJTCR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 30V 10A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.53 EUR |
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Technische Details RF4E100AJTCR Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: HUML2020L8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V.
Weitere Produktangebote RF4E100AJTCR nach Preis ab 0.33 EUR bis 2.32 EUR
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RF4E100AJTCR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10A Pulsed drain current: 36A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±12V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2890 Stücke: Lieferzeit 7-14 Tag (e) |
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RF4E100AJTCR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10A Pulsed drain current: 36A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±12V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2890 Stücke: Lieferzeit 14-21 Tag (e) |
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RF4E100AJTCR | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 30V 10A 8-Pin HUML EP T/R |
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RF4E100AJTCR | Hersteller : ROHM Semiconductor |
MOSFETs Nch 30V 10A Si MOSFET |
auf Bestellung 2674 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4E100AJTCR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 10A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V |
auf Bestellung 11684 Stücke: Lieferzeit 10-14 Tag (e) |
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