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RF4E110BNTR

RF4E110BNTR Rohm Semiconductor

rf4e110bn-e.pdf Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 11A 8-Pin HUML EP T/R
auf Bestellung 6210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
741+0.21 EUR
770+ 0.2 EUR
1000+ 0.18 EUR
6000+ 0.17 EUR
Mindestbestellmenge: 741
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Technische Details RF4E110BNTR Rohm Semiconductor

Description: MOSFET N-CH 30V 11A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: HUML2020L8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V.

Weitere Produktangebote RF4E110BNTR nach Preis ab 0.42 EUR bis 1.6 EUR

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RF4E110BNTR RF4E110BNTR Hersteller : Rohm Semiconductor rf4e110bn-e.pdf Trans MOSFET N-CH 30V 11A 8-Pin HUML EP T/R
auf Bestellung 2757 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
279+0.56 EUR
291+ 0.52 EUR
500+ 0.48 EUR
1000+ 0.45 EUR
2500+ 0.42 EUR
Mindestbestellmenge: 279
RF4E110BNTR RF4E110BNTR Hersteller : Rohm Semiconductor datasheet?p=RF4E110BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
auf Bestellung 966 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.06 EUR
100+ 0.79 EUR
500+ 0.66 EUR
Mindestbestellmenge: 17
RF4E110BNTR RF4E110BNTR Hersteller : ROHM Semiconductor datasheet?p=RF4E110BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET 4.5V Drive Nch MOSFET
auf Bestellung 1424 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
33+1.6 EUR
38+ 1.38 EUR
100+ 0.96 EUR
500+ 0.8 EUR
1000+ 0.69 EUR
3000+ 0.61 EUR
6000+ 0.57 EUR
Mindestbestellmenge: 33
RF4E110BNTR RF4E110BNTR Hersteller : Rohm Semiconductor datasheet?p=RF4E110BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
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