RF4E110BNTR Rohm Semiconductor
auf Bestellung 6210 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 741+ | 0.2 EUR |
| 770+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
| 2000+ | 0.16 EUR |
| 6000+ | 0.15 EUR |
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Technische Details RF4E110BNTR Rohm Semiconductor
Description: MOSFET N-CH 30V 11A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: HUML2020L8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V.
Weitere Produktangebote RF4E110BNTR nach Preis ab 0.39 EUR bis 1.64 EUR
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RF4E110BNTR | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 30V 11A 8-Pin HUML EP T/R |
auf Bestellung 2757 Stücke: Lieferzeit 14-21 Tag (e) |
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RF4E110BNTR | Hersteller : ROHM Semiconductor |
MOSFET 4.5V Drive Nch MOSFET |
auf Bestellung 1424 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4E110BNTR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 11A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V |
auf Bestellung 649 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4E110BNTR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 11A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V |
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