RF4L055GNTCR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 60V 5.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.59 EUR |
| 6000+ | 0.56 EUR |
| 9000+ | 0.53 EUR |
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Technische Details RF4L055GNTCR Rohm Semiconductor
Description: MOSFET N-CH 60V 5.5A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.7V @ 1mA, Supplier Device Package: HUML2020L8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V.
Weitere Produktangebote RF4L055GNTCR nach Preis ab 0.55 EUR bis 1.65 EUR
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RF4L055GNTCR | Hersteller : ROHM Semiconductor |
MOSFET RF4L055GN is a Power MOSFET with Low on-resistance, suitable for switching. |
auf Bestellung 2427 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4L055GNTCR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 60V 5.5A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V |
auf Bestellung 15176 Stücke: Lieferzeit 10-14 Tag (e) |
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| RF4L055GNTCR | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 60V 5.5A 8-Pin HUML EP T/R |
auf Bestellung 2507 Stücke: Lieferzeit 14-21 Tag (e) |
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