RF4L055GNTCR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 5.5A HUML2020L8
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.7 EUR |
| 6000+ | 0.64 EUR |
| 9000+ | 0.62 EUR |
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Technische Details RF4L055GNTCR Rohm Semiconductor
Description: MOSFET N-CH 60V 5.5A HUML2020L8, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: HUML2020L8, Vgs(th) (Max) @ Id: 2.7V @ 1mA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerUDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote RF4L055GNTCR nach Preis ab 0.75 EUR bis 2.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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RF4L055GNTCR | Rohm Semiconductor |
Trans MOSFET N-CH 60V 5.5A 8-Pin HUML EP T/R |
auf Bestellung 1947 Stücke: Lieferzeit 14-21 Tag (e) |
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RF4L055GNTCR | ROHM Semiconductor |
MOSFETs Transistor, MOSFET Nch, 60V(Vdss), 5.5A(Id), (4.5V Drive) |
auf Bestellung 1953 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4L055GNTCR | Rohm Semiconductor |
Description: MOSFET N-CH 60V 5.5A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V |
auf Bestellung 13577 Stücke: Lieferzeit 10-14 Tag (e) |
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| RF4L055GNTCR |
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Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 60V 5.5A 8-Pin HUML EP T/R
Trans MOSFET N-CH 60V 5.5A 8-Pin HUML EP T/R
auf Bestellung 1947 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 182+ | 0.95 EUR |
| 250+ | 0.9 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.81 EUR |
| RF4L055GNTCR |
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Hersteller: ROHM Semiconductor
MOSFETs Transistor, MOSFET Nch, 60V(Vdss), 5.5A(Id), (4.5V Drive)
MOSFETs Transistor, MOSFET Nch, 60V(Vdss), 5.5A(Id), (4.5V Drive)
auf Bestellung 1953 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.58 EUR |
| 10+ | 1.44 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.75 EUR |
| RF4L055GNTCR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 5.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
Description: MOSFET N-CH 60V 5.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
auf Bestellung 13577 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.67 EUR |
| 13+ | 1.69 EUR |
| 100+ | 1.12 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.8 EUR |